NCE1512I Datasheet, Mosfet, NCE Power Semiconductor

NCE1512I Features

• Mosfet
• VDS = 150V,ID =12A RDS(ON) <160mΩ @ VGS=10V (Typ:130mΩ)
• High density cell design for ultra low Rdson
• Fully characterized avalanche voltage and current

PDF File Details

Part number:

NCE1512I

Manufacturer:

NCE Power Semiconductor

File Size:

289.83kb

Download:

📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE1512I uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE1512I Application

• Applications General Features
• VDS = 150V,ID =12A RDS(ON) <160mΩ @ VGS=10V (Typ:130mΩ)
• High density cell design for ultra low Rd

TAGS

NCE1512I

NCE Power Semiconductor

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