NCE2006NE Key Features
- VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM
- High Power and current handing capability
- Lead free product is acquired
- Surface Mount Package
- PWM application -Load switch
- Part: NCE2006NE
- Manufacturer: NCE Power Semiconductor
- Size: 349.30 KB
Related NCE Power Semiconductor Datasheets
| Part Number | Description |
|---|---|
| NCE2003 | N & P-Channel Enhancement Mode Power MOSFET |
| NCE2004NE | N-Channel Enhancement Mode Power MOSFET |
| NCE2007N | N-Channel Enhancement Mode Power MOSFET |
| NCE2008E | NCE N-Channel Enhancement Mode Power MOSFET |
| NCE2010E | NCE N-Channel Enhancement Mode Power MOSFET |
NCE2006NE Description
The NCE2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications .It is ESD protested.