NCE2006NE - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

The NCE2006NE by NCE Power Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	NCE2006NE
Manufacturer	NCE Power Semiconductor
File Size	349.30 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE2006NE-NCEPowerSemiconductor.pdf
Additional preview pages of the NCE2006NE datasheet.

The NCE2006NE uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 20V,ID =7A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 21mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High Power and current handing capability.
Lead free product is acquired.
Surface Mount Package Schematic diagram.

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Published: Feb 5, 2016 |