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NCE2007N - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V,ID =6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package D1 G1 G2 D2 S1 S2 Schematic diagram.

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Datasheet Details

Part number NCE2007N
Manufacturer NCE Power Semiconductor
File Size 316.42 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE2007N Datasheet

Full PDF Text Transcription for NCE2007N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE2007N. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE2007N SNCE N-Channel Enhancement Mode Power MOSFET Description The NCE2007N uses advanced trench technology to provide excellen...

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ption The NCE2007N uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features ● VDS = 20V,ID =6.5A RDS(ON) < 27mΩ @ VGS=2.5V RDS(ON) < 22mΩ @ VGS=4.

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