NCE2014ES Key Features
- VDS =20V,ID =14A RDS(ON) <7 mΩ @ VGS=4.5V RDS(ON) <9 mΩ @ VGS=2.5V ESD Rating: 2000V HBM
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- PWM application
- Load switch
- Part: NCE2014ES
- Manufacturer: NCE Power Semiconductor
- Size: 378.57 KB
Related NCE Power Semiconductor Datasheets
| Part Number | Description |
|---|---|
| NCE2010E | NCE N-Channel Enhancement Mode Power MOSFET |
| NCE2011E | NCE N-Channel Enhancement Mode Power MOSFET |
| NCE2012 | NCE N-Channel Enhancement Mode Power MOSFET |
| NCE2003 | N & P-Channel Enhancement Mode Power MOSFET |
| NCE2004NE | N-Channel Enhancement Mode Power MOSFET |
NCE2014ES Description
The NCE2014ES uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.