Full PDF Text Transcription for NCE20P09S (Reference)
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http://www.ncepower.com Pb Free Product NCE20P09S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P09S uses advanced trench technology to provide excelle...
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ption The NCE20P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D1 G1 G2 D2 S1 S2 Schematic diagram General Features ● VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.
NCE20P09S Datasheet
