NCE20P09S mosfet equivalent, p-channel enhancement mode power mosfet.
* VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) < 40mΩ @ VGS=-2.5V
* High power and current handing capability
* Lead free product is acquired
* .
D1 G1
G2
D2
S1 S2
Schematic diagram
General Features
* VDS = -20V,ID = -9A RDS(ON) < 28mΩ @ VGS=-4.5V RDS(ON) .
The NCE20P09S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
D1 G1
G2
D2
S1 S2
Schematic diag.
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