Full PDF Text Transcription for NCE20P45Q (Reference)
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http://www.ncepower.com Pb Free Product NCE20P45Q NCE P-Channel Enhancement Mode Power MOSFET Description The NCE20P45Q uses advanced trench technology and design to prov...
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ption The NCE20P45Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-19V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation Schematic diagram Pin Assignment Application ● Load switch ● Battery protection Package Marking and Ordering Information DFN 3.3x3.3 EP top view Device Markin
NCE20P45Q Datasheet
