Datasheet Details
| Part number | NCE20P70G |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 347.62 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE20P70G Datasheet
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General Description
The NCE20P70G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =-20V,ID =-70A RDS(ON) < 3mΩ @ VGS=-4.5V RDS(ON) < 4mΩ @ VGS=-2.5V RDS(ON) < 8mΩ @ VGS=-1.8V.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation Schematic diagram Pin Assignment.