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NCE3007S - P-Channel Enhancement Mode Power MOSFET

Description

The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in load switch and battery protection applications.

Features

  • VDS =-30V,ID =-6.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.

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Datasheet preview – NCE3007S

Datasheet Details

Part number NCE3007S
Manufacturer NCE Power Semiconductor
File Size 381.43 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3007S Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE3007S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE3007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in load switch and battery protection applications. General Features ● VDS =-30V,ID =-6.5A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 72mΩ @ VGS=-4.
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