NCE3011E Key Features
- VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
- PWM application -Load switch
- Part: NCE3011E
- Manufacturer: NCE Power Semiconductor
- Size: 356.67 KB
Related NCE Power Semiconductor Datasheets
| Part Number | Description |
|---|---|
| NCE3012S | P-Channel Enhancement Mode Power MOSFET |
| NCE3018AS | N-Channel Enhancement Mode Power MOSFET |
| NCE3007S | P-Channel Enhancement Mode Power MOSFET |
| NCE3008M | N-Channel Enhancement Mode Power MOSFET |
| NCE3020Q | N-Channel Enhancement Mode Power MOSFET |
NCE3011E Description
The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.It is ESD protested.