NCE3011E - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

The NCE3011E by NCE Power Semiconductor is a N-Channel Enhancement Mode Power MOSFET. Below is the official datasheet preview.

Datasheet Details

Part number	NCE3011E
Manufacturer	NCE Power Semiconductor
File Size	356.67 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3011E-NCEPowerSemiconductor.pdf
Additional preview pages of the NCE3011E datasheet.

The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

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Published: Feb 5, 2016 |