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NCE3011E Datasheet N-Channel Enhancement Mode Power MOSFET

Manufacturer: NCE Power Semiconductor

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Datasheet Details

Part number NCE3011E
Manufacturer NCE Power Semiconductor
File Size 356.67 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3011E Datasheet

General Description

The NCE3011E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.It is ESD protested.

General

Overview

http://www.ncepower.com Pb Free Product NCE3011E NCE N-Channel Enhancement Mode Power.

Key Features

  • VDS = 30V,ID =11A RDS(ON) < 10mΩ @ VGS=10V RDS(ON) < 14mΩ @ VGS=4.5V ESD Rating: 2000V HBM.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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