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NCE3012S - P-Channel Enhancement Mode Power MOSFET

Description

The NCE3012S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS = -30V,ID = -12A RDS(ON) < 20mΩ @ VGS=-4.5V RDS(ON) < 15mΩ @ VGS=-10V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Datasheet preview – NCE3012S

Datasheet Details

Part number NCE3012S
Manufacturer NCE Power Semiconductor
File Size 369.90 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE3012S Datasheet
Additional preview pages of the NCE3012S datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE3012S NCE P-Channel Enhancement Mode Power MOSFET DESCRIPTION The NCE3012S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES ● VDS = -30V,ID = -12A RDS(ON) < 20mΩ @ VGS=-4.
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