NCE3020Q mosfet equivalent, n-channel enhancement mode power mosfet.
* VDS =30V,ID =20A RDS(ON) <9mΩ @ VGS=10V RDS(ON) <15mΩ @ VGS=4.5V
* High density cell design for ultra low Rdson
* Fully characterized Avalanche voltage and .
General Features
* VDS =30V,ID =20A RDS(ON) <9mΩ @ VGS=10V RDS(ON) <15mΩ @ VGS=4.5V
* High density cell design.
The NCE3020Q uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
* VDS =30V,ID =20A RDS(ON) <9mΩ @ VGS=10V RDS(ON) <15mΩ @ VGS=4.5V
.
Image gallery
Download