Datasheet Details
| Part number | NCE3035G |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 333.82 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE3035G Datasheet
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General Description
The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS =30V,ID =35A RDS(ON) < 7.0mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.
- Special process technology for high ESD capability.