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NCE3035G - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE3035G
Manufacturer	NCE Power Semiconductor
File Size	333.82 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE3035G-NCEPowerSemiconductor.pdf

NCE3035G Product details

Description

The NCE3035G uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =30V,ID =35A RDS(ON) < 7.0mΩ @ VGS=10V RDS(ON) < 12mΩ @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation.
Special process technology for high ESD capability.

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Published: Jun 2, 2018 |