NCE30H12 - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

General Description

The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS =30V,ID =120A RDS(ON).

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NCE30H12 n-channel enhancement mode power mosfet by NCE Power Semiconductor - Datasheet Preview

Datasheet Details

Part number	NCE30H12
Manufacturer	NCE Power Semiconductor
File Size	372.22 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE30H12 Datasheet

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http://www.ncepower.com Pb Free Product NCE30H12 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE30H12 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =120A RDS(ON) <3.5mΩ @ VGS=10V (Typ:3.