NCE4618SP - N-Channel Enhancement Mode Power MOSFET
NCE Power Semiconductor
General Description
The NCE4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating.
Full PDF Text Transcription for NCE4618SP (Reference)
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http://www.ncepower.com Pb Free Product Halogen Free Compliance NCE4618SP NCE Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor Description The NCE4618...
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annel Enhancement Mode Field Effect Transistor Description The NCE4618SP uses advanced trench technology to provide excellent RSS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a unidirectional or bi-directional load switch, facilitated by its common-drain configuration. Package Dimensions Unit : mm General Features ● VSSS =20V,IS =6A ● 2.5V drive ● Common-drain type ● 2KV HBM Package Information ● Minimum Packing Quantity : 5,000 pcs.
NCE4618SP Datasheet
