NCE6003XY mosfet equivalent, n-channel enhancement mode power mosfet.
Schematic Diagram
* VDS =60V,ID =3A RDS(ON) <78mΩ @ VGS=10V RDS(ON) < 96mΩ @ VGS=4.5V
* High power and current handing capability
* Lead free product is acq.
The NCE6003XY uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other switching application.
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General Features
Schematic Diagram
* VDS =60V,ID =3A R.
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