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NCE Power Semiconductor

NCE603S Datasheet Preview

NCE603S Datasheet

N & P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE603S
N and P-Channel Enhancement Mode Power MOSFET
Description
The NCE603S uses advanced trench technology to provide
excellent RDS(ON) and low gate charge . The complementary
MOSFETs may be used to form a level shifted high side
switch, and for a host of other applications.
General Features
N-Channel
VDS = 60V,ID =6.3A
RDS(ON) < 30m@ VGS=10V
Schematic diagram
P-Channel
VDS = -60V,ID = -6A
RDS(ON) < 80m@ VGS=-10V
High power and current handing capability
Lead free product is acquired
Surface mount package
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking Device
Device Package Reel Size
Tape width
Quantity
NCE603S
NCE603S
SOP-8
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
N-Channel P-Channel
Unit
Drain-Source Voltage
VDS 60 -60 V
Gate-Source Voltage
VGS ±20 ±20 V
Continuous Drain Current
Pulsed Drain Current (Note 1)
TA=25
TA=100
6.3 -6
ID A
4.5 -4.2
IDM 40 -25 A
Maximum Power Dissipation
TA=25
PD 2.0 2.0 W
Operating Junction and Storage Temperature Range
TJ,TSTG
-55 To 150
-55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note2)
Thermal Resistance,Junction-to-Ambient (Note2)
RθJA
RθJA
N-Ch
P-Ch
62.5 /W
62.5 /W
Wuxi NCE Power Co., Ltd
Page 1
v1.0




NCE Power Semiconductor

NCE603S Datasheet Preview

NCE603S Datasheet

N & P-Channel Enhancement Mode Power MOSFET

No Preview Available !

http://www.ncepower.com
Pb Free Product
NCE603S
N-CH Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=60V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=6A
VDS=5V,ID=6A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=15V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=30V, RL=4.7
VGS=10V,RGEN=3
VDS=15V,ID=6A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
VSD VGS=0V,IS=6A
Min
60
-
-
1.2
-
15
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
1.6
26
-
500
60
25
5
2.6
16.1
2.3
25
4.5
6.5
0.8
Max
-
1
±100
2.5
30
-
-
-
-
-
-
-
-
-
-
-
1.2
Unit
V
μA
nA
V
m
S
PF
PF
PF
nS
nS
nS
nS
nC
nC
nC
V
Wuxi NCE Power Co., Ltd
Page 2
v1.0


Part Number NCE603S
Description N & P-Channel Enhancement Mode Power MOSFET
Maker NCE Power Semiconductor
Total Page 9 Pages
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