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NCE6080A - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE6080A
Manufacturer	NCE Power Semiconductor
File Size	398.33 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6080A-NCEPowerSemiconductor.pdf

NCE6080A Product details

Description

The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Good stability and uniformity with high EAS.
Excellent package for good heat dissipation Schematic diagram.

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Published: Jun 2, 2018 |