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NCE6080A - N-Channel Enhancement Mode Power MOSFET

General Description

The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation Schematic diagram.

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Datasheet Details

Part number NCE6080A
Manufacturer NCE Power Semiconductor
File Size 398.33 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE6080A Datasheet

Full PDF Text Transcription for NCE6080A (Reference)

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http://www.ncepower.com Pb Free Product NCE6080A NCE N-Channel Enhancement Mode Power MOSFET Description The NCE6080A uses advanced trench technology and design to provid...

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tion The NCE6080A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =60V,ID =80A RDS(ON)=6.5mΩ (typical) @ VGS=10V RDS(ON)=7.5mΩ (typical) @ VGS=4.