Datasheet Details
| Part number | NCE60D09AS |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 406.28 KB |
| Description | N-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 NCE60D09AS Datasheet
|
|
|
General Description
The NCE60D09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS = 60V,ID =9A RDS(ON) < 15mΩ @ VGS=10V (Typ:10mΩ).
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Low gate to drain charge to reduce switching losses.