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NCE60NP2012K - N & P-Channel Enhancement Mode Power MOSFET

General Description

The NCE60NP2012K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • N channel.
  • VDS =60V,ID =20A RDS(ON).

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Datasheet Details

Part number NCE60NP2012K
Manufacturer NCE Power Semiconductor
File Size 405.87 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60NP2012K Datasheet

Full PDF Text Transcription for NCE60NP2012K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE60NP2012K. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE60NP2012K NCE N&P-Channel complementary Power MOSFET Description The NCE60NP2012K uses advanced trench technology and design to...

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ription The NCE60NP2012K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =20A RDS(ON) <35mΩ @ VGS=10V RDS(ON) <40mΩ @ VGS=4.5V p channel ● VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.

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