NCE60NP2012K Description
The NCE60NP2012K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
NCE60NP2012K Key Features
- VDS =60V,ID =20A RDS(ON) <35mΩ @ VGS=10V RDS(ON) <40mΩ @ VGS=4.5V
- VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- H-bridge
- Inverters
- Tape width