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NCE60P12K - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Key Features

  • VDS =-60V,ID =-12A RDS(ON).

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Datasheet Details

Part number NCE60P12K
Manufacturer NCE Power Semiconductor
File Size 413.54 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60P12K Datasheet

Full PDF Text Transcription for NCE60P12K (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE60P12K. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE60P12K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P12K uses advanced trench technology and design to prov...

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ption The NCE60P12K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features ● VDS =-60V,ID =-12A RDS(ON) <100mΩ @ VGS=-10V RDS(ON) <125mΩ @ VGS=-4.

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