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NCE60P25K - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.

Key Features

  • VDS =-60V,ID =-25A RDS(ON).

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Datasheet Details

Part number NCE60P25K
Manufacturer NCE Power Semiconductor
File Size 384.43 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE60P25K Datasheet

Full PDF Text Transcription for NCE60P25K (Reference)

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http://www.ncepower.com Pb Free Product NCE60P25K NCE P-Channel Enhancement Mode Power MOSFET Description The NCE60P25K uses advanced trench technology and design to prov...

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ption The NCE60P25K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.