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NCEP3060EQ Datasheet - NCE Power Semiconductor

N-Channel Power MOSFET

NCEP3060EQ Features

* VDS =30V,ID =60A RDS(ON)=4mΩ (typical) @ VGS=10V RDS(ON)=5.4mΩ (typical) @ VGS=4.5V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested

* ESD protection : HBM Class 2 App

NCEP3060EQ General Description

The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP3060EQ Datasheet (328.95 KB)

Preview of NCEP3060EQ PDF

Datasheet Details

Part number:

NCEP3060EQ

Manufacturer:

NCE Power Semiconductor

File Size:

328.95 KB

Description:

N-channel power mosfet.

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NCEP3060EQ N-Channel Power MOSFET NCE Power Semiconductor

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