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NCEP3085EG

Manufacturer: NCE Power Semiconductor

NCEP3085EG datasheet by NCE Power Semiconductor.

NCEP3085EG datasheet preview

NCEP3085EG Datasheet Details

Part number NCEP3085EG
Datasheet NCEP3085EG-NCEPowerSemiconductor.pdf
File Size 368.29 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Power MOSFET
NCEP3085EG page 2 NCEP3085EG page 3

NCEP3085EG Overview

The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP3085EG Key Features

  • VDS =30V,ID =85A RDS(ON)=2.7mΩ (typical) @ VGS=10V RDS(ON)=3.5mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • ESD protection : HBM Class 2
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
NCE Power Semiconductor logo - Manufacturer

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NCEP3085EG Distributor

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