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NCEP3065QU - N-Channel Super Trench I Power MOSFET

Description

The NCEP3065QU uses Super Trench I technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =30V,ID =65A RDS(ON)=1.9mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ΔVds TESTED! DFN 3.3X3.3 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP3065QU NCEP3065QU DFN3.3X3.3-8L Reel Size Ø180mm Tape width - Quantity 5000.

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Datasheet Details

Part number NCEP3065QU
Manufacturer NCE Power Semiconductor
File Size 847.92 KB
Description N-Channel Super Trench I Power MOSFET
Datasheet download datasheet NCEP3065QU Datasheet
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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCEP3065QU NCE N-Channel Super Trench I Power MOSFET Description The NCEP3065QU uses Super Trench I technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ● Ideal for high-frequency switching and synchronous rectification General Features ● VDS =30V,ID =65A RDS(ON)=1.9mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.
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