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NCEP3060EQ

Manufacturer: NCE Power Semiconductor

NCEP3060EQ datasheet by NCE Power Semiconductor.

NCEP3060EQ datasheet preview

NCEP3060EQ Datasheet Details

Part number NCEP3060EQ
Datasheet NCEP3060EQ-NCEPowerSemiconductor.pdf
File Size 328.95 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Power MOSFET
NCEP3060EQ page 2 NCEP3060EQ page 3

NCEP3060EQ Overview

The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP3060EQ Key Features

  • VDS =30V,ID =60A RDS(ON)=4mΩ (typical) @ VGS=10V RDS(ON)=5.4mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • ESD protection : HBM Class 2
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
NCE Power Semiconductor logo - Manufacturer

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NCEP3060EQ Distributor

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