Datasheet4U Logo Datasheet4U.com

NCEP3060EQ - N-Channel Power MOSFET

Description

The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =30V,ID =60A RDS(ON)=4mΩ (typical) @ VGS=10V RDS(ON)=5.4mΩ (typical) @ VGS=4.5V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.
  • ESD protection : HBM Class 2.

📥 Download Datasheet

Datasheet preview – NCEP3060EQ

Datasheet Details

Part number NCEP3060EQ
Manufacturer NCE Power Semiconductor
File Size 328.95 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP3060EQ Datasheet
Additional preview pages of the NCEP3060EQ datasheet.

📁 Similar Datasheet

Other Datasheets by NCE Power Semiconductor

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com Pb Free Product NCEP3060EQ NCE N-Channel Super Trench Power MOSFET Description The NCEP3060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. It is ESD protested. General Features ● VDS =30V,ID =60A RDS(ON)=4mΩ (typical) @ VGS=10V RDS(ON)=5.4mΩ (typical) @ VGS=4.
Published: |