Datasheet Details
| Part number | NCEP3085EG |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 368.29 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 NCEP3085EG Datasheet
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General Description
The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
Key Features
- VDS =30V,ID =85A RDS(ON)=2.7mΩ (typical) @ VGS=10V RDS(ON)=3.5mΩ (typical) @ VGS=4.5V.
- Excellent gate charge x RDS(on) product(FOM).
- Very low on-resistance RDS(on).
- 150 °C operating temperature.
- Pb-free lead plating.
- 100% UIS tested.
- ESD protection : HBM Class 2.