NCEP3085EG mosfet equivalent, n-channel power mosfet.
* VDS =30V,ID =85A RDS(ON)=2.7mΩ (typical) @ VGS=10V RDS(ON)=3.5mΩ (typical) @ VGS=4.5V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistanc.
The NCEP3085EG uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg..
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