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NCEP30T21GU Datasheet - NCE Power Semiconductor

N-Channel Power MOSFET

NCEP30T21GU Features

* VDS =30V,ID =210A RDS(ON)=1mΩ (typical) @ VGS=10V RDS(ON)=1.25mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Appl

NCEP30T21GU General Description

The NCEP30T21GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switchin.

NCEP30T21GU Datasheet (316.11 KB)

Preview of NCEP30T21GU PDF

Datasheet Details

Part number:

NCEP30T21GU

Manufacturer:

NCE Power Semiconductor

File Size:

316.11 KB

Description:

N-channel power mosfet.

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NCEP30T21GU N-Channel Power MOSFET NCE Power Semiconductor

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