* Low On-Resistance 15.0±0.3 RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 2.5 A)
* Low Ciss Ciss = 930 pF TYP.
* High Avalanche Capability Ratings
* Isolate .

PACKAGE DIMENSIONS (in millimeters) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 FEATURES
* Low On-Resistance 15.0±0.3 RDS(o.

The 2SK2139 is N-Channel Power MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 FEATURES
* Low On-Resistance 15.0±0.3 RDS(on) = 1.5 Ω MAX. (VGS =.

2K0S-N005

2K0S-N012

2K0S-N015

2K0S-N024

2K0S-N048

2K1000

2K13AA042

2K30

2K30A

2K33

2K3A1-25

2K40

2K45