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2SA1221 - PNP SILICON EPITAXIAL TRANSISTOR

General Description

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Key Features

  • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies.
  • Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959.

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Datasheet Details

Part number 2SA1221
Manufacturer NEC
File Size 85.25 KB
Description PNP SILICON EPITAXIAL TRANSISTOR
Datasheet download datasheet 2SA1221 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES • Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. • Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V: 2SA1221/2SC2958 VCEO = 160 V: 2SA1222/2SC2959 PACKAGE DRAWING (UNIT: mm) ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* PT Tj Tstg Ratings −160 −140/–160 −5.0 −500 −1.0 1.