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2SA812 - PNP Transistor

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • Complementary to 2SC1623A.
  • High DC Current Gain: hFE = 200 TYP. (VCE =.
  • 6.0 V, IC =.
  • 1.0 mA).
  • High Voltage: VCEO =.
  • 50 V.

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Datasheet Details

Part number 2SA812
Manufacturer NEC
File Size 302.61 KB
Description PNP Transistor
Datasheet download datasheet 2SA812 Datasheet
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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SA812A PNP SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to 2SC1623A • High DC Current Gain: hFE = 200 TYP. (VCE = −6.0 V, IC = −1.0 mA) • High Voltage: VCEO = −50 V ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage VCBO −60 V Collector to Emitter Voltage VCEO −50 V Emitter to Base Voltage VEBO −5.
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