n-channel mosfet.
* Low On-Resistance
RDS (on) = 5.0 Ω (VGS = 10 V, ID = 2.0 A)
10.0±0.3
3.2±0.2
4.5±0.2 2.7±0.2
15.0±0.3
3±0.1 4±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain.
PACKAGE DIMENSIONS (in millimeter)
FEATURES
* Low On-Resistance
RDS (on) = 5.0 Ω (VGS = 10 V, ID = 2.0 A)
10.0±0.
The 2SK2476 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
FEATURES
* Low On-Resistance
RDS (on) = 5.0 Ω (VGS = 10 V, ID = 2.0 A)
10.0±0.3
3.2±0.2
4.5±0.2 2.7±0.2.
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