2SK2486
DESCRIPTION
The 2SK2486 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain)
FEATURES
- Low On-Resistance
RDS (on) = 2.0 Ω (VGS = 10 V, ID = 4.0 A)
15.7 MAX. 4
3.2±0.2
- Low Ciss Ciss = 1 830 p F TYP.
- High Avalanche Capability Ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)- Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current-
- Single Avalanche Energy-
- - PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 7.0 ± 18 120 3.0 150 7.0 144.1 V V A A W W ˚C A m J
20.0±0.2 6.0 1 19 MIN. 3.0±0.2
2.2±0.2 5.45
MP-88
Drain
- 55 to +150 ˚C
- - Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V → 0
Gate
Body...
