* Low On-Resistance RDS (on) = 2.0 Ω (VGS = 10 V, ID = 4.0 A) 1.0 15.7 MAX. 4 3.2±0.2
* Low Ciss Ciss = 1 830 pF TYP.
* High Avalanche Capability Ratings.

PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. .

The 2SK2486 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 1.0±0.2 5.45 4.5±0.2 0.6±0.1 2.8±0.1 1. Gate 2. Drain 3. Source 4. Fin (Drain) FEATURES
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2SK2480

2SK2481

2SK2482

2SK2483

2SK2485

2SK2487

2SK2488

2SK2489

2SK240

2SK2400

2SK2401

2SK2402

2SK2405