2SK2597
2SK2597 is N-Channel MOSFET manufactured by NEC.
PRELIMINARY DATA SHEET
SILICON POWER MOS FIELD EFFECT TRANSISTOR
N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION
Features
- High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)
- Low intermodulation distortion
- Covers all base station frequencies such as 800-MHz PDC and GSM
- High-reliability gold electrodes
- Hermetic sealed package
- Internal matching circuit
- Push-pull structure
PACKAGE DRAWING (Unit: mm)
45˚ G1 S G2 45˚
φ 3.3±0.3
11.4±0.3 19.4±0.4
D1
D2
1.4 3.2±0.2 ±0.3 3.2±0.2 13.5±0.3...
