* High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz)
* Low intermodulation distortion
* Covers all base station frequencies such as 800-MHz PDC and GSM
* High-reliability gold electrodes
* Hermetic sea
2SK2597
NEC
101.63 KB
N-channel mosfet.
PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PH.
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