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2SK2597 - N-Channel MOSFET

Key Features

  • High output, high gain PO = 100 W, GL = 13 dB (TYP. ) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP. ) (f = 960 MHz).
  • Low intermodulation distortion.
  • Covers all base station frequencies such as 800-MHz PDC and GSM.
  • High-reliability gold electrodes.
  • Hermetic sealed package.
  • Internal matching circuit.
  • Push-pull structure.

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Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK2510 SWITCHING N-CHANNEL POWER MOS FET
2SK2511 SWITCHING N-CHANNEL POWER MOS FET
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2SK2514 SWITCHING N-CHANNEL POWER MOS FET
2SK2515 SWITCHING N-CHANNEL POWER MOS FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PHONE POWER AMPLIFICATION FEATURES • High output, high gain PO = 100 W, GL = 13 dB (TYP.) (f = 900 MHz) PO = 90 W, GL = 12 dB (TYP.) (f = 960 MHz) • Low intermodulation distortion • Covers all base station frequencies such as 800-MHz PDC and GSM • High-reliability gold electrodes • Hermetic sealed package • Internal matching circuit • Push-pull structure PACKAGE DRAWING (Unit: mm) 45˚ G1 S G2 45˚ φ 3.3±0.3 11.4±0.3 19.4±0.4 D1 D2 1.4 3.2±0.2 ±0.3 3.2±0.2 13.5±0.3 28.0±0.3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Parameter Drain-source voltage Gate-source voltage Drain current (D.C.