2SK2595 Datasheet, MOSFET, Hitachi Semiconductor

2SK2595 Features

• Mosfet
• High power output, High gain, High efficiency PG = 7.8dB, Pout = 37.3dBm, ηD = 50 %min. (f = 836.5MHz)
• Compact package capable of surface mounting Outline This Dev

PDF File Details

Part number:

2SK2595

Manufacturer:

Hitachi Semiconductor

File Size:

68.76kb

Download:

📄 Datasheet

Description:

Silicon n-channel mosfet.

2SK2595 Application

• Applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any t

TAGS

2SK2595

Hitachi Semiconductor

📁 Related Datasheet

2SK259 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 350V(Min) ·Fast Switching Speed ·100% avalan.

2SK2590 - Silicon N-Channel MOSFET (Hitachi Semiconductor)
2SK2590 Silicon N-Channel MOS FET Preliminary Application High speed power switching Features • • • • • Low on-resistance High speed switching Low .

2SK2590 - N-Channel MOSFET Transistor (Inchange Semiconductor)
isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current ID= 7A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Fast Switching Speed ·Minimum Lot.

2SK2590 - Silicon N-Channel MOSFET (Renesas)
2SK2590 Silicon N Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • No .

2SK2593 - Silicon N-Channel MOSFET (Panasonic Semiconductor)
Silicon Junction FETs (Small Signal) 2SK2593 Silicon N-Channel Junction FET For low-frequency amplification For switching 0.4 unit: mm 1.6±0.15 0.8±.

2SK2595 - Silicon N-Channel MOSFET (Renesas Technology)
.. 2SK2595 Silicon N-Channel MOS FET UHF Power Amplifier REJ03G0206-0300 Rev.3.00 Aug.26.2004 Features • High power output, High ga.

2SK2596 - Silicon N-Channel MOSFET (Renesas Technology)
2SK2596 Silicon N-Channel MOS FET UHF Power Amplifier Features • High power output, High gain, High efficiency PG = 12.2 dB, Pout = 1.05 W, ηD = 45%mi.

2SK2597 - N-Channel MOSFET (NEC)
PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR 2SK2597 N-CHANNEL SILICON POWER MOSFET FOR BASE STATION OF 900 MHz BAND CELLULAR PH.

2SK2598 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
2SK2598 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2598 Chopper Regulator, DC−DC Converter and Motor Drive Applications .

2SK2599 - Silicon N-Channel MOSFET (Toshiba Semiconductor)
2SK2599 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV) 2SK2599 Chopper Regulator, DC−DC Converter and Motor Drive Applications .