2SK3230 Key Features
- pact package
- High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA)
- Includes diode and high resistance at G
| Part Number | Description |
|---|---|
| 2SK3230B | N-Channel MOSFET |
| 2SK3230C | MOSFET |
| 2SK3204 | N-Channel MOSFET |
| 2SK3224 | N-Channel MOSFET |
| 2SK3225 | N-Channel MOSFET |