Datasheet4U Logo Datasheet4U.com

2SK3230B - N-Channel MOSFET

General Description

The 2SK3230B is suitable for converter of ECM.

General-purpose product.

0.05 +0.1 Low noise:

108.5 dB TYP.

Especially suitable for audio and telephone Small package: S

Key Features

  • 3 2 1 0.5 0.5 1.6 ±0.1.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3233 N-Channel MOSFET Hitachi Semiconductor
2SK3234 MOSFET Hitachi Semiconductor
2SK3235 Silicon N-Channel MOSFET Renesas
2SK3235 N-Channel MOSFET Transistor Inchange Semiconductor
2SK3236 N-Channel MOSFET Toshiba Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3230 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR
2SK3230C MOSFET
2SK3204 N-Channel MOSFET
2SK3224 N-Channel MOSFET
2SK3225 N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET www.DataSheet4U.com JUNCTION FIELD EFFECT TRANSISTOR 2SK3230B N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230B is suitable for converter of ECM. General-purpose product. PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.4 0.1–0.05 +0.1 • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone • Small package: SC-89 (TUSM) 1.6 ±0.1 0.8 ±0.1 FEATURES 3 2 1 0.5 0.5 1.6 ±0.1 ORDERING INFORMATION PART NUMBER 2SK3230B PACKAGE SC-89 (TUSM) 0.5 ±0.05 0.2 +0.1 –0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = −1.