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2SK3230C - MOSFET

General Description

The 2SK3230C contains a diode and high resistivity between its gates and sources, for achieving short stability PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.4 0.1

time during power-on.

Key Features

  • Low noise:.
  • 108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ).
  • Containing a diode and high resistivity, short stability time is achieved during power-on.
  • Small package: SC-89 (TUSM) 0.5 ±0.05 0.5 0.5 1.6 ±0.1 0.2 +0.1.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230C N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230C contains a diode and high resistivity between its gates and sources, for achieving short stability PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.4 0.1–0.05 +0.1 time during power-on. In addition, because of its compact 1.6 ±0.1 for compact ECMs for audio or mobile devices such as cellphones. 0.8 ±0.1 package and low noise, the 2SK3230C is especially suitable 3 2 1 FEATURES • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Containing a diode and high resistivity, short stability time is achieved during power-on. • Small package: SC-89 (TUSM) 0.5 ±0.05 0.5 0.5 1.6 ±0.1 0.2 +0.