2SK3230
2SK3230 is N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR manufactured by NEC.
DESCRIPTION
The 2SK3230 is suitable for converter of ECM.
PACKAGE DRAWING (Unit: mm)
0.3 ± 0.05 0.1 +0.1
- 0.05
FEATURES
- pact package
- High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA)
- Includes diode and high resistance at G
- S
1.6 ± 0.1 0.8 ± 0.1
ORDERING INFORMATION
2SK3230 SC-89 (TUSM)
0.5 ± 0.05
1.6 ± 0.1
PART NUMBER
PACKAGE
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature Notes 1. VGS =
- 1.0 V 2. Mounted on ceramic substrate of 3.0 cm x 0.64 mm Remark
2 Note2 Note1
0.2 +0.1
- 0
VDSX VGDO ID IG PT Tj Tstg
- 20 10 10 200 125
- 55 to +125
V V m A m A m W °C °C
Source Gate Drain
EQUIVALENT CIRCUIT
Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D15942EJ1V0DS00 (1st edition) Date Published January 2002 NS CP(K) Printed in Japan
©
ELECTRICAL CHARACTERISTICS (TA =...
