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2SK3230 - N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR

General Description

The 2SK3230 is suitable for converter of ECM.

0.05

Key Features

  • Compact package.
  • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA).
  • Includes diode and high resistance at G - S 1.0 1.6 ± 0.1 0.8 ± 0.1 G D S.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK3230 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM DESCRIPTION The 2SK3230 is suitable for converter of ECM. PACKAGE DRAWING (Unit: mm) 0.3 ± 0.05 0.1 +0.1 –0.05 FEATURES • Compact package • High forward transfer admittance 1000 µS TYP. (IDSS = 100 µA) 1600 µS TYP. (IDSS = 200 µA) • Includes diode and high resistance at G - S 1.0 1.6 ± 0.1 0.8 ± 0.1 G D S ORDERING INFORMATION 2SK3230 SC-89 (TUSM) 0.5 ± 0.05 1.6 ± 0.1 PART NUMBER PACKAGE ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature Notes 1. VGS = –1.0 V 2. Mounted on ceramic substrate of 3.