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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3304
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3304 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply.
ORDERING INFORMATION
PART NUMBER 2SK3304 PACKAGE TO-3P
FEATURES
• Low gate charge : QG = 44 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.0 A) • Gate voltage rating : ±30 V • Low on-state resistance : RDS(on) = 2.0 Ω MAX. (VGS = 10 V, ID = 4.0 A) • Avalanche capability ratings (TO-3P)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tstg
Note2 Note2
900 ±30 ±7 ±21 130 3.