* Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A) RDS(on)3 = 14.0 mΩ MAX. (VGS = 4.0 V, ID = 18 A) <.

of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.

The 2SK3367 is N-Channel MOS Field Effect Transistor designed for DC/DC converter application of notebook computers. FEATURES
* Low on-resistance RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 12.0 mΩ MAX. (VGS = 4.5 V, ID = 18 A) RDS.

2SK3360

2SK3361

2SK3362

2SK3362-01

2SK3363-01

2SK3364-01

2SK3365

2SK3366

2SK330

2SK3301

2SK3302

2SK3304

2SK3305

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