Datasheet4U Logo Datasheet4U.com

2SK3433 - N-Channel MOSFET

Description

The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance: RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) 5 RDS(on)2 = 41 mΩ MAX. (VGS = 4.0 V, ID = 20 A).
  • Low Ciss: Ciss = 1500 pF TYP.
  • Built-in gate protection diode (TO-220AB).

📥 Download Datasheet

Datasheet preview – 2SK3433

Datasheet Details

Part number 2SK3433
Manufacturer NEC
File Size 48.29 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK3433 Datasheet
Additional preview pages of the 2SK3433 datasheet.
Other Datasheets by NEC

Full PDF Text Transcription

Click to expand full text
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3433 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3433 2SK3433-S 2SK3433-Z PACKAGE TO-220AB TO-262 TO-220SMD DESCRIPTION The 2SK3433 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance: RDS(on)1 = 26 mΩ MAX. (VGS = 10 V, ID = 20 A) 5 RDS(on)2 = 41 mΩ MAX. (VGS = 4.0 V, ID = 20 A) • Low Ciss: Ciss = 1500 pF TYP. • Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse) Note1 VDSS VGSS ID(DC) ID(pulse) PT PT Tch Tstg Note2 Note2 60 ±20 ±40 ±160 47 1.
Published: |