NE52118 Overview
PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT.
NE52118 Key Features
- 4-pin super minimold package
- Grounded Emitter Transistor
| Part number | NE52118 |
|---|---|
| Datasheet | NE52118_NEC.pdf |
| File Size | 63.90 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
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PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT.
See all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE52118-T1 | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT |
| NE5500179A | OPERATION SILICON RF POWER MOSFET |
| NE5510179A | 3.5V OPERATION SILICON RF POWER MOSFET |
| NE5510279A | 4.8V OPERATION SILICON RF POWER LDMOS FET |
| NE5511279A | 7.5V OPERATION SILICON RF POWER LD-MOS FET |
| NE5520279A | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
| NE5520279A-T1 | NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET |
| NE5520379A | 3.2V Operation Silicon RF Power LDMOS FET |
| NE56900 | NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE56953E | NPN MEDIUM POWER MICROWAVE TRANSISTOR |