NE52118 Datasheet | NEC

FEATURES - For Low Noise & High Gain amplifiers NF = 1.0 d B TYP. Ga = 15.0 d B TYP. MSG = 15.0 d B TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 m A, ZS = ZL = 50 Ω) OIP3 = 15 d Bm TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 m A, ZS = ZL = 50 Ω) - 4-pin super minimold package - Grounded Emitter Transistor ORDERING INFORMATION (PLAN) Part Number NE52118-T1 Package 4-pin super minimold Marking V41 Supplying Form Embossed tape 8 mm wide. Pin 3, pin 4 face to perforation side of the tape. Qty 3 kp/reel. Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE52118) ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Collector to Emitter Voltage Collector to Base Voltage Emitter to Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCEO VCBO VEBO IC IB Ptot Tj Tstg Ratings 5.0 3.0 3.0 7 0.3 30 +125 - 65 to +125 Unit V V V m A m A m W °C °C The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. P14544EJ1V0DS00 (1st edition) Date Published November 1999 N CP(K) Printed in Japan © REMENDED OPERATING CONDITIONS (TA = +25 °C) Parameter Collector to Emitter Voltage Collector Current Symbol VCE IC MIN. 1.5 - TYP. 2.0 3 MAX. 3.0 6 Unit V m A ELECTRICAL CHARACTERISTICS (TA = +25°C) Parameter Emitter to Base Leak Current Collector to Base Leak Current Collector to Emitter Leak Current DC current gain Base to Emitter Forward Voltage Base to Collector Forward Voltage Noise Figure Associated Gain Out Third-Order Distortion Intercept Point Noise Figure Associated Gain Symbol IEBO ICBO ICEO h FE VFBE VFBC NF Ga OIP3 NF Ga Test Conditions VEBO = 3 V VCBO = 3 V VCEO = 5 V VCE = 2 V, IC = 3 m A IBE = 100 µA IBC = 100 µA VCE = 2 V, IC = 3 m A,...