NE5500179A mosfet equivalent, operation silicon rf power mosfet.
* HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
* HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f =.
* DIGITAL CELLULAR PHONES
* DIGITAL CORDLESS PHONES
* OTHERS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART N.
The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed i.
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