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NE5500179A Datasheet, NEC

NE5500179A Datasheet, NEC

NE5500179A

datasheet Download (Size : 40.73KB)

NE5500179A Datasheet

NE5500179A mosfet

operation silicon rf power mosfet.

NE5500179A

datasheet Download (Size : 40.73KB)

NE5500179A Datasheet

NE5500179A Features and benefits

NE5500179A Features and benefits


* HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm
* HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f =.

NE5500179A Application

NE5500179A Application


* DIGITAL CELLULAR PHONES
* DIGITAL CORDLESS PHONES
* OTHERS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART N.

NE5500179A Description

NE5500179A Description

The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed i.

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TAGS

NE5500179A
OPERATION
SILICON
POWER
MOSFET
NEC

Manufacturer


NEC

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