NE5500179A Datasheet - NEC

OPERATION SILICON RF POWER MOSFET

NE5500179A Features

* HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm

* HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm

* HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm

NE5500179A General Description

The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver.

NE5500179A Datasheet (40.73 KB)

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Part number:

NE5500179A

Manufacturer:

NEC

File Size:

40.73 KB

Description:

Operation silicon rf power mosfet.

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NE5500179A OPERATION SILICON POWER MOSFET NEC

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NE5500179A Features

NE5500179A General Description

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