NE5500179A Datasheet | NEC

FEATURES - HIGH OUTPUT POWER: 29.5 d Bm TYP at VDS = 4.8 V, IDQ = 100 m A, f = 1.9 GHz, PIN = 20 d Bm - HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 m A, f = 1.9 GHz, PIN = 20 d Bm - HIGH LINEAR GAIN: 14 d B TYP at VDS = 4.8 V, IDQ = 100 m A, f = 1.9 GHz, PIN = 0 d Bm - SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX - SINGLE SUPPLY: 3.0 to 6.0 V OUTLINE DIMENSIONS (Units in mm) Gate PACKAGE OUTLINE 79A 4.2 Max Source Drain Gate 1.5 ± 0.2 Source Drain 1.2 Max 0.8 ± 0.15 4.4 Max 1.0 Max 5.7 Max 0.6 ± 0.15 0.4 ± 0.15 5.7 Max 0.8 Max 3.6 ± 0.2 Bottom View 0.2 ± 0.1 0.9 ± 0.2 DESCRIPTION The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliver 29.5 d Bm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 d Bm output power with 50% power added efficiency at 3.5 V by varying the gate voltage as a power control function. APPLICATIONS - DIGITAL CELLULAR PHONES - DIGITAL CORDLESS PHONES - OTHERS ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS CHARACTERISTICS UNITS MIN IGSS Gate to Source Leakage Current n A - IDSS Drain to Source Leakage Current n A -...