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  NEC Electronic Components Datasheet  

NE5500179A Datasheet

OPERATION SILICON RF POWER MOSFET

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4.8 V OPERATION SILICON RF
POWER MOSFET FOR GSM1800 AND NE5500179A
GSM1900 TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER:
29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA,
f = 1.9 GHz, PIN = 20 dBm
• HIGH POWER ADDED EFFICIENCY:
55% TYP at VDS = 4.8 V, IDQ = 100 mA,
f = 1.9 GHz, PIN = 20 dBm
• HIGH LINEAR GAIN:
14 dB TYP at VDS = 4.8 V, IDQ = 100 mA,
f = 1.9 GHz, PIN = 0 dBm
• SURFACE MOUNT PACKAGE:
5.7 x 5.7 x 1.1 mm MAX
• SINGLE SUPPLY:
3.0 to 6.0 V
OUTLINE DIMENSIONS (Units in mm)
Gate
PACKAGE OUTLINE 79A
4.2 Max
Source
Drain
Gate
1.5 ± 0.2
Source
Drain
0.4 ± 0.15
5.7 Max
0.8 Max
3.6 ± 0.2
Bottom View
DESCRIPTION
The NE5500179A is an N-Channel silicon power MOSFET
specially designed as the transmission power amplifier for
4.8 V GSM1800 and GSM1900 handsets. Dies are manufac-
tured using NEC's NEWMOS technology (NEC's 0.6 µm WSi
gate lateral MOSFET) and housed in a surface mount pack-
age. This device can deliver 29.5 dBm output power with
55% power added efficiency at 1.9 GHz under the 4.8 V sup-
ply voltage, or can deliver 27 dBm output power with 50%
power added efficiency at 3.5 V by varying the gate voltage
as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES
• DIGITAL CORDLESS PHONES
• OTHERS
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
CHARACTERISTICS
UNITS MIN
IGSS
Gate to Source Leakage Current
nA
-
IDSS
Drain to Source Leakage Current
nA
-
VTH
Gate Threshold Voltage
V
1.0
gm
Transconductance
S
-
RDS(ON) Drain to Source On Resistance
-
-
BVDSS
Drain to Source Breakdown Voltage
V
20
TYP
-
-
1.35
0.41
1.00
24
NE5500179A
79A
MAX
TEST CONDITIONS
100
VGSS = 6.0 V
100
VDSS = 8.5 V
2.0
VDS = 4.8 V, IDS = 1 mA
-
VDS = 4.8 V, IDS1 = 150 mA, IDS2 = 250 mA
-
VGS = 6.0 V, VDS = 0.5 V
-
IDSS = 10 A
California Eastern Laboratories


  NEC Electronic Components Datasheet  

NE5500179A Datasheet

OPERATION SILICON RF POWER MOSFET

No Preview Available !

NE5500179A
PERFORMANCE SPECIFICATIONS (Peak measurement at Duty Cycle 1/8, 4.6 mS period, TA = 25˚C)
SYMBOLS
CHARACTERISTICS
UNITS MIN
TYP
MAX
TEST CONDITIONS
GL
Linear Gain
dB
13.0
f = 1.9 GHz, PIN = 0 dBm,
VDS = 3.0 V, IDQ = 100 mA
POUT
Output Power
dBm
24.5
f = 1.9 GHz, PIN = 15 dBm,
IOP
ηADD
Operating Current
Power Added Efficiency
mA
170
%
50
VDS = 3.0 V, IDQ = 100 mA
GL
Linear Gain
dB
13.5
f = 1.9 GHz, PIN = 0 dBm,
VDS = 3.5 V, IDQ = 100 mA
POUT(1) Output Power
dBm
26.5
f = 1.9 GHz, PIN = 18 dBm,
IOP(1)
ηADD
Operating Current
Power Added Efficiency
mA
210
%
52
VDS = 3.5 V, IDQ = 100 mA
POUT(2) Maximum Output Power
dBm
27.0
f = 1.9 GHz, PIN = 18 dBm
IOP(2)
Operating Current
mA
260
VDS = 3.5 V, VGS = 2.5 V
GL
Linear Gain
dB
14.0
f = 1.9 GHz, PIN = 0 dBm,
VDS = 4.8 V, IDQ = 100 mA
POUT(1) Output Power
dBm
28.5
29.5
f = 1.9 GHz, PIN = 20 dBm,
IOP(1)
ηADD
Operating Current
Power Added Efficiency
mA
300
%
47
55
VDS = 4.8 V, IDQ = 100 mA
POUT(2) Maximum Output Power
dBm
30.0
f = 1.9 GHz, PIN = 20 dBm
IOP(2)
Operating Current
mA
350
VDS = 4.8 V, VGS = 2.5 V
GL
Linear Gain
dB
14.5
f = 1.9 GHz, PIN = 0 dBm,
VDS =6.0 V, IDQ = 100 mA
POUT
Output Power
dBm
31.5
f = 1.9 GHz, PIN = 22 dBm,
IOP
ηADD
Operating Current
Power Added Efficiency
mA
380
%
55
VDS =6.0 V, IDQ = 100 mA
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain Supply Voltage
V
8.5
VGS
Gate Supply Voltage
V
6
ID
Drain Current
A
0.25
ID
Drain Current (Pulse Test)2
A
0.5
PIN
Input Power3
dBm
25
PT
TCH
TSTG
Total Power Dissipation
Channel Temperature
Storage Temperature
W
1.6
°C
125
°C -55 to +125
Notes:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, TON = LMS.
3. Frequency = 1.9 GHz, VDS = 4.8 V.
ORDERING INFORMATION1
PART NUMBER
QTY
NE5500179A-T1
1 Kpcs/Reel
Note:
1. Embossed tape 12 mm wide. Gate pin faces perforation side of
the tape.
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
VDS
VGS
ID
PIN
f
TOP
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current (Pulse Test)
Input Power
Operating Frequency Range
Operating Temperature
TEST CONDITIONS
UNITS
MIN
V
3.0
V
0
Duty Cycle 50%, Ton1ms
A
Frequency = 1.9 GHz, VDS = 4.8 V
dBm
21
GHz
1.6
˚C
-30
TYP
MAX
3.5
6.0
2.0
2.5
0.5
22
23
2.5
25
85


Part Number NE5500179A
Description OPERATION SILICON RF POWER MOSFET
Maker NEC
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