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NE5500179A - OPERATION SILICON RF POWER MOSFET

Datasheet Summary

Description

The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets.

Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package.

Features

  • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm.
  • HIGH POWER ADDED.

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Datasheet Details

Part number NE5500179A
Manufacturer NEC
File Size 40.73 KB
Description OPERATION SILICON RF POWER MOSFET
Datasheet download datasheet NE5500179A Datasheet
Additional preview pages of the NE5500179A datasheet.

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Full PDF Text Transcription

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4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION AMPLIFIERS FEATURES • HIGH OUTPUT POWER: 29.5 dBm TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH POWER ADDED EFFICIENCY: 55% TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 20 dBm • HIGH LINEAR GAIN: 14 dB TYP at VDS = 4.8 V, IDQ = 100 mA, f = 1.9 GHz, PIN = 0 dBm • SURFACE MOUNT PACKAGE: 5.7 x 5.7 x 1.1 mm MAX • SINGLE SUPPLY: 3.0 to 6.0 V OUTLINE DIMENSIONS (Units in mm) Gate PACKAGE OUTLINE 79A 4.2 Max Source Drain Gate 1.5 ± 0.2 Source Drain 1.2 Max 0.8 ± 0.15 4.4 Max 1.0 Max 5.7 Max 0.6 ± 0.15 0.4 ± 0.15 5.7 Max 0.8 Max 3.6 ± 0.2 Bottom View 0.2 ± 0.1 0.9 ± 0.
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