Datasheet Details
| Part number | NE5500179A |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 40.73 KB |
| Description | OPERATION SILICON RF POWER MOSFET |
| Datasheet | NE5500179A-NEC.pdf |
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Overview: 4.8 V OPERATION SILICON RF POWER MOSFET FOR GSM1800 AND NE5500179A GSM1900 TRANSMISSION.
| Part number | NE5500179A |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 40.73 KB |
| Description | OPERATION SILICON RF POWER MOSFET |
| Datasheet | NE5500179A-NEC.pdf |
|
|
|
The NE5500179A is an N-Channel silicon power MOSFET specially designed as the transmission power amplifier for 4.8 V GSM1800 and GSM1900 handsets.
Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package.
This device can deliver 29.5 dBm output power with 55% power added efficiency at 1.9 GHz under the 4.8 V supply voltage, or can deliver 27 dBm output power with 50% power added efficiency at 3.5 V by varying the gate voltage as a power control function.
Compare NE5500179A distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
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