NE5510179A - 3.5V OPERATION SILICON RF POWER MOSFET

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NEC

NE5510179A 3.5V OPERATION SILICON RF POWER MOSFET by NEC - Datasheet Preview — Datasheet preview – NE5510179A

Datasheet Details

Part number	NE5510179A
Manufacturer	NEC
File Size	55.61 KB
Description	3.5V OPERATION SILICON RF POWER MOSFET
Datasheet	NE5510179A Datasheet
Additional preview pages of the NE5510179A datasheet.

Product details

Description

The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.6 V GSM 1 800 and GSM 1 900 handsets.Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package.The device can deliver 30.0 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.6 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power con

Features

High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
High linear gain : GL = 11.0 dB TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 10 dBm).
Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
Single supply : VDS = 3.0 to 6.0 V.

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Published: Jul 9, 2007 |