PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON
RF POWER MOSFET FOR 1.9 GHZ NE5510179A
TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm TYP
VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
• HIGH LINEAR GAIN: 11 dB TYP
VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm
• HIGH POWER ADDED EFFICIENCY: 50% TYP
VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
• SINGLE SUPPLY: 2.8 to 6.0 V
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 Max
Source
Gate
Drain
Gate
1.5 – 0.2
Source
Drain
0.4 – 0.15
5.7 Max
0.8 Max
3.6 – 0.2
DESCRIPTION
The NE5510179A is an N-Channel silicon power MOSFET
specially designed as the transmission driver amplifier for 3.5
V GSM1800 and GSM 1900 handsets. Dies are manufactured
using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate
lateral MOSFET) and housed in a surface mount package.
This device can deliver 29.5 dBm output power with 50% power
added efficiency at 1.9 GHz under the 3.5 V supply voltage,
or can deliver 29 dBm output power at 2.8 V by varying the
gate voltage as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.5 V GSM 1800/GSM 1900 Class 1 Handsets
• OTHERS:
1.6 - 2.0 GHz TDMA Applications
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
NE5510179A
PACKAGE OUTLINE
79A
SYMBOLS
CHARACTERISTICS
UNITS MIN TYP MAX
IGSS Gate-to-Source Leakage Current
nA
100
IDSS Drain-to-Source Leakage Current
nA
100
VTH Gate Threshold Voltage
V 1.0 1.35 2.0
gm Transconductance
S 0.82
RDS (ON) Drain-to-Source On Resistance
0.5
BVDSS Drain-to-Source Breakdown Voltage
V
20
24
TEST CONDITIONS
VGSS = 6.0 V
VDSS = 8.5 V
VDS = 3.5 V, IDS = 1 mA
VDS = 3.5 V, IDS1 = 300 mA, IDS2 = 500 mA
VGS = 6.0 V, VDS = 0.5 V
IDSS = 10 A
California Eastern Laboratories
