NE5510179A mosfet equivalent, 3.5v operation silicon rf power mosfet.
* HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
* HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN =.
* DIGITAL CELLULAR PHONES: 3.5 V GSM 1800/GSM 1900 Class 1 Handsets
* OTHERS: 1.6 - 2.0 GHz TDMA Applications
E.
The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed.
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