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  NEC Electronic Components Datasheet  

NE5510179A Datasheet

3.5V OPERATION SILICON RF POWER MOSFET

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PRELIMINARY DATA SHEET
3.5 V OPERATION SILICON
RF POWER MOSFET FOR 1.9 GHZ NE5510179A
TRANSMISSION AMPLIFIERS
FEATURES
• HIGH OUTPUT POWER: 29.5 dBm TYP
VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
• HIGH LINEAR GAIN: 11 dB TYP
VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm
• HIGH POWER ADDED EFFICIENCY: 50% TYP
VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm
• SINGLE SUPPLY: 2.8 to 6.0 V
• SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 79A
4.2 Max
Source
Gate
Drain
Gate
1.5 – 0.2
Source
Drain
0.4 – 0.15
5.7 Max
0.8 Max
3.6 – 0.2
DESCRIPTION
The NE5510179A is an N-Channel silicon power MOSFET
specially designed as the transmission driver amplifier for 3.5
V GSM1800 and GSM 1900 handsets. Dies are manufactured
using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate
lateral MOSFET) and housed in a surface mount package.
This device can deliver 29.5 dBm output power with 50% power
added efficiency at 1.9 GHz under the 3.5 V supply voltage,
or can deliver 29 dBm output power at 2.8 V by varying the
gate voltage as a power control function.
APPLICATIONS
• DIGITAL CELLULAR PHONES:
3.5 V GSM 1800/GSM 1900 Class 1 Handsets
• OTHERS:
1.6 - 2.0 GHz TDMA Applications
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
NE5510179A
PACKAGE OUTLINE
79A
SYMBOLS
CHARACTERISTICS
UNITS MIN TYP MAX
IGSS Gate-to-Source Leakage Current
nA
100
IDSS Drain-to-Source Leakage Current
nA
100
VTH Gate Threshold Voltage
V 1.0 1.35 2.0
gm Transconductance
S 0.82
RDS (ON) Drain-to-Source On Resistance
0.5
BVDSS Drain-to-Source Breakdown Voltage
V
20
24
TEST CONDITIONS
VGSS = 6.0 V
VDSS = 8.5 V
VDS = 3.5 V, IDS = 1 mA
VDS = 3.5 V, IDS1 = 300 mA, IDS2 = 500 mA
VGS = 6.0 V, VDS = 0.5 V
IDSS = 10 A
California Eastern Laboratories


  NEC Electronic Components Datasheet  

NE5510179A Datasheet

3.5V OPERATION SILICON RF POWER MOSFET

No Preview Available !

NE5510179A
ABSOLUTE MAXIMUM RATINGS1 (TA = 25 °C)
SYMBOLS
VDS
VGS
ID
ID
PIN
PT
TCH
TSTG
PARAMETERS
Drain Supply Voltage
Gate Supply Voltage
Drain Current (continuous)
Drain Current (Pulse Test)2
Input Power3
Total Power Dissipation
Channel Temperature
Storage Temperature
UNITS
V
V
A
dBm
W
°C
°C
RATINGS
8.5
6
A0.5
1.0
27
1.6
125
-55 to +125
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
2. Duty Cycle 50%, Ton = 1ms.
3. Freq = 1.9 GHz, VDS = 3.5 V.
TYPICAL PERFORMANCE CURVES (TA = 25°C)
DRAIN CURRENT vs.
DRAIN TO SOURCE CURRENT
6.0
VGS (MAX) = 10 V,
Step = 1.0 V
5.0
4.0
3.0
2.0
1.0
0.0
0
2 4 6 8 10 12 14 16
Drain to Source Current, VDS (V)
RECOMMENDED OPERATING CONDITIONS
SYMBOLS
VDS
VGS
IDS
PIN
freq
TOP
PARAMETERS
UNITS
Drain to Supply Voltage V
Gate Supply Voltage
V
Drain Current (Pulse Test)1 A
Input Power2
dBm
Operating Frequency Range GHz
Operating Temperature °C
TYP
3.5
2.0
22
25
MAX
6.0
2.5
0.5
23
2.0
85
Note:
1. Duty Cycle 50%, Ton = 1ms.
2. Freq = 1.9 GHz, VDS = 3.5 V.
ORDERING INFORMATION1
PART NUMBER
QTY
NE5510179A-T1
1 K/Reel
Note:
1. Embossed tape 12 mm wide. Gate pin face to perforations side
of the tape.
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
1000
VDS = 3.5 V
100
10
1
0
1.0 1.5 2.0 2.5
3.0
Gate to Source Voltage, VGS (V)


Part Number NE5510179A
Description 3.5V OPERATION SILICON RF POWER MOSFET
Maker NEC
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