NE5510179A Datasheet - NEC

3.5V OPERATION SILICON RF POWER MOSFET

NE5510179A Features

* HIGH OUTPUT POWER: 29.5 dBm TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm

* HIGH LINEAR GAIN: 11 dB TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 5dBm

* HIGH POWER ADDED EFFICIENCY: 50% TYP VDS = 3.5 V, IDQ = 200 mA, f = 1.9 GHz, PIN = 22 dBm

* SINGLE

NE5510179A General Description

The NE5510179A is an N-Channel silicon power MOSFET specially designed as the transmission driver amplifier for 3.5 V GSM1800 and GSM 1900 handsets. Dies are manufactured using NEC's NEWMOS technology (NEC's 0.6 µm WSi gate lateral MOSFET) and housed in a surface mount package. This device can deliv.

NE5510179A Datasheet (45.04 KB)

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NE5510179A

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NEC

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45.04 KB

Description:

3.5v operation silicon rf power mosfet.

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NE5510179A 3.5V OPERATION SILICON POWER MOSFET NEC

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NE5510179A Features

NE5510179A General Description

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