Part NE5510179A
Description 3.5V OPERATION SILICON RF POWER MOSFET
Category MOSFET
Manufacturer NEC
Size 55.61 KB
NEC
NE5510179A

Overview

  • High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm)
  • High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm)
  • High linear gain : GL = 11.0 dB TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 10 dBm)
  • Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
  • Single supply : VDS = 3.0 to 6.0 V