Datasheet4U Logo Datasheet4U.com

NE5510179A Datasheet 3.5v Operation Silicon Rf Power MOSFET

Manufacturer: NEC (now Renesas Electronics)

Overview: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.

General Description

The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.6 V GSM 1 800 and GSM 1 900 handsets.

Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package.

The device can deliver 30.0 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.6 V supply voltage, or can deliver 29 dBm output power at 2.8 V by varying the gate voltage as a power control function.

Key Features

  • High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
  • High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm).
  • High linear gain : GL = 11.0 dB TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 10 dBm).
  • Surface mount package : 5.7 × 5.7 × 1.1 mm MAX.
  • Single supply : VDS = 3.0 to 6.0 V.

NE5510179A Distributor

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
NE5510279A 4.8V OPERATION SILICON RF POWER LDMOS FET
NE5511279A 7.5V OPERATION SILICON RF POWER LD-MOS FET
NE5500179A OPERATION SILICON RF POWER MOSFET
NE5520279A NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NE5520279A-T1 NECS 3.2 V / 2 W / L&S BAND MEDIUM POWER SILICON LD-MOSFET
NE5520379A 3.2V Operation Silicon RF Power LDMOS FET
NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
NE52118-T1 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
NE56900 NPN MEDIUM POWER MICROWAVE TRANSISTOR
NE56953E NPN MEDIUM POWER MICROWAVE TRANSISTOR