NE5510179A Description
The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.6 V GSM 1 800 and GSM 1 900 handsets. Dies are manufactured using NEC’s NEWMOS technology (NEC’s 0.6 µm WSi gate lateral-diffusion MOS FET) and housed in a surface mount package. The device can deliver 30.0 dBm output power with 50% power added efficiency at 1.9 GHz under the 3.6 V supply voltage, or...
NE5510179A Key Features
- High output power
- High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm)
- High linear gain
- Surface mount package
- Single supply