NE5510179A 3.5V OPERATION SILICON RF POWER MOSFET

NEC

Description

PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5510179A 3.6 V OPERATION SILICON RF POWER LD-MOS FET FOR 1.9 GHz 1 W TRANSMISSION AMPLIFIERS DESCRIPTI.
The NE5510179A is an N-channel silicon power MOS FET specially designed as the transmission driver amplifier for 3.

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Datasheet Specifications

Part number: NE5510179A
Manufacturer: NEC
File Size: 55.61 KB
Datasheet: NE5510179A_NEC.pdf
Description: 3.5V OPERATION SILICON RF POWER MOSFET

Features

* High output power : Pout = 30.0 dBm TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm)
* High power added efficiency : ηadd = 50% TYP. (VDS = 3.6 V, IDset = 300 mA, f = 1.9 GHz, Pin = 22 dBm)
* High linear gain : GL = 11.0 dB TYP. (VDS = 3.6 V, IDset = 300 m

Applications

* Digital cellular phones
* Others : 3.6 V driver amplifier for GSM 1 800/ GSM 1 900 class 1 handsets, or 4.8 V final stage amplifier : General purpose amplifiers for 1.6 to 2.0 GHz TDMA applications ORDERING INFORMATION Part Number NE5510179A-T1 Package 79A Marking W1 Supplyin

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NE5510179A 3.5V OPERATION SILICON POWER MOSFET NEC

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