3w l / s-band power gaas mesfet.
* High Output Power
* High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ.
* High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz.
for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with .
The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excell.
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