0.2 w l / s-band power gaas mes fet.
* High Output Power
* High Linear Gain : PO (1 dB) = +23 dBm typ. : 16 dB typ.
* High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz.
for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) wit.
The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, exc.
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