4 w l / s-band power gaas fet n-channel gaas mes fet.
* Class A operation
* High output power: 36 dBm (typ)
* High gain: 11.5 dB (typ)
* High power added efficiency: 45 % (typ)
* Hermetically sealed ceram.
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device befor.
The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure.
PACKAGE DIMENSION (UNIT: mm)
1.0 ± 0.1 4.0 MIN BOTHLEADS .
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