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NE688M03 - NPN SILICON TRANSISTOR

Description

The NE688M03 transistor is designed for low cost amplifier and oscillator applications.

Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity.

Features

  • NEW M03.

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Datasheet preview – NE688M03

Datasheet Details

Part number NE688M03
Manufacturer NEC
File Size 35.51 KB
Description NPN SILICON TRANSISTOR
Datasheet download datasheet NE688M03 Datasheet
Additional preview pages of the NE688M03 datasheet.

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Full PDF Text Transcription

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PRELIMINARY DATA SHEET NPN SILICON TRANSISTOR NE688M03 FEATURES • NEW M03 PACKAGE: • Smallest transistor outline package available • Low profile/0.59 mm package height • Flat lead style for better RF performance HIGH GAIN BANDWIDTH PRODUCT: fT = 9.5 GHz LOW NOISE FIGURE: NF = 1.7 dB at 2 GHz HIGH COLLECTOR CURRENT: ICMAX = 100 mA OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M03 1.2±0.05 0.8±0.1 2 1.4 ±0.1 0.45 (0.9) 0.45 1 0.2±0.1 • • • TS 0.3±0.1 3 DESCRIPTION The NE688M03 transistor is designed for low cost amplifier and oscillator applications. Low noise figure, high gain and high current capability equate to wide dynamic range and excellent linearity. NEC's new low profile/flat lead style "M03" package is ideal for today's portable wireless applications.
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