Datasheet Summary
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PRELIMINARY DATA SHEET
NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
Features
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- HIGH fT: 17 GHz TYP at 2 V, 7 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at f = 2 GHz, 2 V, 1 mA HIGH GAIN: |S21E|2 = 15.5 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
0.65 2.0 ± 0.2 1.3 2 1
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01
TOP VIEW
2.1 ± 0.1 1.25 ± 0.1
6 0.2 (All Leads) 5
T1E
DESCRIPTION
The NE698M01 is an NPN high frequency silicon epitaxial transistor (NE686) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting...