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NE699M01 NPN EPITAXIAL SILICON TRANSISTOR

NE699M01 Description

www.DataSheet4U.com PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION .
The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package.

NE699M01 Features

* HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE 0.65 2.0 ± 0.2 1.3 2 1 NE699M01 OUTLINE DIMENSIONS

NE699M01 Applications

* up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations. 0.9 ± 0.1 0.7 0.15 - 0.05 0 ~ 0.1 +0.10 PIN CONNECTIONS 1. Emitter 4. Emitter 2. Emitter 5. Emitter 3. Base 6. Collector Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL C

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Datasheet Details

Part number
NE699M01
Manufacturer
NEC
File Size
68.65 KB
Datasheet
NE699M01_NEC.pdf
Description
NPN EPITAXIAL SILICON TRANSISTOR

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NPN EPITAXIAL SILICON TRANSISTOR NEC
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