NE699M01 Datasheet - NEC

NPN EPITAXIAL SILICON TRANSISTOR

NE699M01 Features

* HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE 0.65 2.0 ± 0.2 1.3 2 1 NE699M01 OUTLINE DIMENSIONS

NE699M01 General Description

The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for LNA and pre-dri.

NE699M01 Datasheet (68.65 KB)

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Part number:

NE699M01

Manufacturer:

NEC

File Size:

68.65 KB

Description:

Npn epitaxial silicon transistor.

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NE699M01 NPN EPITAXIAL SILICON TRANSISTOR NEC

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NE699M01 Features

NE699M01 General Description

Datasheet Details

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